Nambari ya Sehemu | TK35A08N1,S4X | Mtengenezaji | Toshiba Semiconductor and Storage |
---|---|---|---|
Maelezo | MOSFET N-CH 80V 35A TO-220 | Hali ya bure ya bure / Hali ya RoHS | Kuongoza bure / RoHS Inavyotakiwa |
Kiasi Inapatikana | 77039 pcs | Karatasi ya data | TK35A08N1,S4X.pdf |
Vgs (th) (Max) @ Id | 4V @ 300µA | Vgs (Max) | ±20V |
Teknolojia | MOSFET (Metal Oxide) | Duka la Kifaa cha Wasambazaji | TO-220SIS |
Mfululizo | U-MOSVIII-H | Rds On (Max) @ Id, Vgs | 12.2 mOhm @ 17.5A, 10V |
Utoaji wa nguvu (Max) | 30W (Tc) | Ufungaji | Tube |
Paket / Uchunguzi | TO-220-3 Full Pack | Majina mengine | TK35A08N1,S4X(S TK35A08N1,S4X-ND TK35A08N1S4X |
Joto la Uendeshaji | 150°C (TJ) | Aina ya kuinua | Through Hole |
Kiwango cha Sensitivity Moisture (MSL) | 1 (Unlimited) | Hali ya bure ya bure / Hali ya RoHS | Lead free / RoHS Compliant |
Capacitance Input (Ciss) (Max) @ Vds | 1700pF @ 40V | Mlango wa Mlango (Qg) (Max) @ Vgs | 25nC @ 10V |
Aina ya FET | N-Channel | Kipengele cha FET | - |
Dari ya Hifadhi (Max Rds On, Min Rds On) | 10V | Futa kwa Chanzo Voltage (Vdss) | 80V |
Maelezo ya kina | N-Channel 80V 35A (Tc) 30W (Tc) Through Hole TO-220SIS | Sasa - Drain inayoendelea (Id) @ 25 ° C | 35A (Tc) |
FEDEX | www.FedEx.com | Kutoka $ 35.00 ada ya meli ya msingi inategemea eneo na nchi. |
---|---|---|
DHL | www.DHL.com | Kutoka $ 35.00 ada ya meli ya msingi inategemea eneo na nchi. |
UPS | www.UPS.com | Kutoka $ 35.00 ada ya meli ya msingi inategemea eneo na nchi. |
TNT | www.TNT.com | Kutoka $ 35.00 ada ya meli ya msingi inategemea eneo na nchi. |