Nambari ya Sehemu | TK11A65W,S5X | Mtengenezaji | Toshiba Semiconductor and Storage |
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Maelezo | MOSFET N-CH 650V 11.1A TO-220 | Hali ya bure ya bure / Hali ya RoHS | Kuongoza bure / RoHS Inavyotakiwa |
Kiasi Inapatikana | 34844 pcs | Karatasi ya data | TK11A65W,S5X.pdf |
Vgs (th) (Max) @ Id | 3.5V @ 450µA | Vgs (Max) | ±30V |
Teknolojia | MOSFET (Metal Oxide) | Duka la Kifaa cha Wasambazaji | TO-220SIS |
Mfululizo | DTMOSIV | Rds On (Max) @ Id, Vgs | 390 mOhm @ 5.5A, 10V |
Utoaji wa nguvu (Max) | 35W (Tc) | Ufungaji | Tube |
Paket / Uchunguzi | TO-220-3 Full Pack | Majina mengine | TK11A65W,S5X(M TK11A65W,S5X-ND TK11A65WS5X |
Joto la Uendeshaji | 150°C (TJ) | Aina ya kuinua | Through Hole |
Kiwango cha Sensitivity Moisture (MSL) | 1 (Unlimited) | Hali ya bure ya bure / Hali ya RoHS | Lead free / RoHS Compliant |
Capacitance Input (Ciss) (Max) @ Vds | 890pF @ 300V | Mlango wa Mlango (Qg) (Max) @ Vgs | 25nC @ 10V |
Aina ya FET | N-Channel | Kipengele cha FET | - |
Dari ya Hifadhi (Max Rds On, Min Rds On) | 10V | Futa kwa Chanzo Voltage (Vdss) | 650V |
Maelezo ya kina | N-Channel 650V 11.1A (Ta) 35W (Tc) Through Hole TO-220SIS | Sasa - Drain inayoendelea (Id) @ 25 ° C | 11.1A (Ta) |
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